| PART |
Description |
Maker |
| MRF19045LSR3 MRF19045LR3 |
1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| BTS725-L1 BTS725-L1E3240 |
2 Channel PROFET Smart High Side Powe...
|
Infineon
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| B25671A5287A37509 B25671A5287A375 |
Film Capacitors - Powe Factor Correction PoleCap capacitor
|
EPCOS
|
| GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| LP0701N3-GP003 LP0701N3-GP002 |
P-Channel Enhancement-Mode Lateral MOSFET
|
Supertex, Inc
|
| AFT09S200W02N AFT09S200W02GNR3 AFT09S200W02NR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
